Power supply circuit
AssigneeSharp Kabushiki Kaisha
InventorsKOICHIRO FUJITA, KENICHI TANAKA, TOMOTOSHI SATOH
Life of this patent
Estimating the term…
Abstract
A power supply circuit includes a first switch that is a FET composed of a GaN-based semiconductor material and a second switch that is another FET composed of a GaN-based semiconductor material. The drain of the first switch is connected to an input voltage side, the source of the first switch is connected to the drain of the second switch and an output voltage side. An false-turn-on suppression circuit that hinders, when one of the first switch and the second switch is switched on, the other of the first switch and the second switch from being switched on is connected to the gate of the first switch and/or the gate of the second switch.
Claims8
A power supply circuit comprising:
- a first switch that is a FET composed of a GaN-based semiconductor material;
- and
- a second switch that is another FET composed of a GaN-based semiconductor material, wherein
- a drain of the first switch is connected to an input voltage side,
- a source of the first switch is connected to a drain of the second switch and an output voltage side, and
- a false-turn-on suppression circuit that hinders, when one of the first switch and the second switch is switched on, the other of the first switch and the second switch from being switched on and that is connected to a gate of the first switch and/or a gate of the second switch.
Dependencies are inferred from the claim text.