Method and apparatus of dead time tuning in an inverter
AssigneeHong Kong Applied Science and Technology Research Institute Company Limited
InventorsHang Sang LEE, Yan LIU
Life of this patent
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Abstract
A method that prevents overload to input source and reduces parasitic inductance in an inverter circuit with dead-time control. A sensing capacitor senses temperatures of transistors in the inverter circuit. A delay generator changes delay times in response to receiving the temperatures of the transistors from the sensing capacitor. A dead time generation unit changes the dead times for the transistors in response to changes in the delay times.
Claims20
A method that prevents overload to input source and reduces parasitic inductance in an inverter circuit with dead-time control, the method comprising:
- sensing, with a first sensing capacitor, temperatures of a high side device in the inverter circuit;
- sensing, with a second sensing capacitor, temperatures of a low side device in the inverter circuit;
- changing, by a first delay generator and in response to receiving the temperatures from the first sensing capacitor, first dead time intervals that correspond to dead times before the high side device is turned on;
- changing, by a second delay generator and in response to receiving the temperatures from the second sensing capacitor, second dead time intervals that correspond to dead times before the low side device is turned on;
- and
- preventing overload to the input source and reducing parasitic inductance by connecting the first sensing capacitor between an output of the first delay generator and a ground, and connecting the second sensing capacitor between an output of the second delay generator and the ground,
- wherein the deadtime control includes generating dead times based on the first dead time intervals and the second dead time intervals.
An inverter circuit that prevents overload to input source and reduces parasitic inductance in the inverter circuit, comprising:
- a first sensing capacitor that is thermally connected to a high side device in the inverter circuit;
- a second sensing capacitor that is thermally connected to a low side device in the inverter circuit;
- a dead times generation unit that prevents shoot-through currents and reduces body-diode conduction time by generating dead times including first dead time intervals and second dead time intervals for the high side device and the low side device respectively and includes:
- a first delay generator that changes the first dead time intervals, wherein the first sensing capacitor is connected between an output of the first delay generator and a ground;
- and
- a second delay generator that changes the second dead time intervals, wherein the second sensing capacitor is connected between an output of the second delay generator and the ground,
- wherein the first dead time intervals correspond to dead times before the high side device is turned on, and the second dead time intervals that correspond to dead times before the low side device is turned on.
A method that prevents overload to input source and reduces parasitic inductance in an inverter circuit with deadtime control, the method comprising:
- sensing temperatures of at least one high side device in the inverter circuit and temperatures of at least one low side device in the inverter circuit;
- changing, with at least one dead times generation unit and in response to receiving the temperatures of the at least one high side device and the temperatures of the at least one low side device, first dead time intervals that correspond to dead times before the at least one high side device is turned on and second dead time intervals that correspond to dead times before the at least one low side device is turned on;
- and
- preventing shoot-through currents and reducing body-diode conduction time by operating the inverter circuit with dead times within a maximum dead time and a minimum dead time, wherein the maximum dead time depends on a capacitance of at least one sensing capacitor at a rated temperature and the minimum dead time depends on the capacitance of the at least one sensing capacitor at Curie temperature.
Dependencies are inferred from the claim text.