Light emitting element

A method of manufacturing a light emitting element, comprising:

• forming, on a substrate, a first light reflecting layer including a multilayer film, and adapted to function as a selective growth mask layer,
• selectively growing a first compound semiconductor layer from a surface of the substrate, the surface being not coated with the first light reflecting layer, and coating the substrate and the first light reflecting layer with the first compound semiconductor layer, and
• sequentially forming an active layer, a second compound semiconductor layer, a second electrode, and a second light reflecting layer on the first compound semiconductor layer,
• forming a plurality of selective growth mask layers provided on the substrate separately from one another, and one of the selective growth mask layers functioning as the first light reflecting layer,
• forming a seed crystal layer growing area in a part of a surface of a portion of the substrate, the portion being exposed to a bottom portion of a selective growth mask layer opening area positioned between the selective growth mask layers,
• forming, on the seed crystal layer growing area, a seed crystal layer thinner than the selective growth mask layer, and
• selectively growing the first compound semiconductor layer from the seed crystal layer on the basis of lateral direction epitaxial growth to coat the substrate and the first light reflecting layer with the first compound semiconductor layer,
• wherein a laminated structural body including the first compound semiconductor layer, the active layer, and the second compound semiconductor layer includes a plurality of laminated structural body units,
• wherein a light emitting element unit includes the laminated structural body units,
• wherein the surface of the substrate has a step-like shape, and
• wherein one laminated structural body unit is formed above a portion of the substrate, and the portion is equivalent to one tread.