Display device and manufacturing method thereof

A method for manufacturing a display device, comprising:

• forming a thin film transistor on a substrate;
• forming an interlayer insulating layer including an organic material on the thin film transistor;
• depositing a capping layer including an inorganic material on the interlayer insulating layer;
• forming a first photosensitive film pattern on the capping layer;
• etching the capping layer by using the first photosensitive film pattern as a mask;
• etching the interlayer insulating layer by using the capping layer as a mask;
• and
• forming an organic light emitting element on the capping layer,
• wherein the interlayer insulating layer does not have photosensitivity, the forming of the interlayer insulating layer includes baking the organic material, and
• the contact hole overlapping the drain electrode of the thin film transistor is formed in the interlayer insulating layer and the capping layer through the etching of the capping layer and the etching of the interlayer insulating layer.

A method for manufacturing a display device, comprising:

• forming a thin film transistor on a substrate;
• forming an interlayer insulating layer including an organic material on the thin film transistor;
• depositing a capping layer including an inorganic material on the interlayer insulating layer;
• forming a first photosensitive film pattern having different heights depending on positions on the capping layer;
• firstly etching the capping layer and the interlayer insulating layer by using the first photosensitive film pattern as a mask;
• decreasing the height of the first photosensitive film pattern to form a second photosensitive film pattern;
• secondly etching the capping layer by using the second photosensitive film pattern as a mask;
• and
• forming an organic light emitting element on the capping layer,
• wherein a contact hole overlapping the drain electrode of the thin film transistor is formed in the interlayer insulating layer and the capping layer through the first etching, and
• an opening that does not overlap the organic light emitting element is formed in the capping layer through the second etching.