GaN SUBSTRATE AND FABRICATION METHOD THEREFOR
AssigneePanasonic Intellectual Property Management Co., Ltd.
InventorsIsao TASHIRO, Hidenao KATAOKA, Nobuyuki YOKOYAMA, Takeshi OHMORI
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Abstract
A GaN substrate that comprises a GaN single crystal having a Ga face and a N face on surfaces thereof, wherein the Ga face includes: a flat face portion; and a curved face portion that surrounds a circumference of the flat face portion, and wherein an off-angle distribution of the N face is larger than an off-angle distribution of the Ga face.
Claims7
A GaN substrate that comprises a GaN single crystal having a Ga face and a N face on surfaces thereof, wherein the Ga face comprises:
- a flat face portion;
- and
- a curved face portion that surrounds a circumference of the flat face portion, and
- wherein an off-angle distribution of the N face is larger than an off-angle distribution of the Ga face.
A fabrication method for a GaN substrate, the fabrication method comprising:
- preparing a GaN substrate that comprises a GaN single crystal having a Ga face and a N face, the Ga face and the N face being parallel to each other on principal surfaces of the GaN substrate, the principal surfaces facing each other;
- causing the N face to face a surface of a jig that comprises a flat face portion at a center thereof and a curved face portion surrounding a circumference of the flat face portion to attach the GaN substrate to the jig;
- polishing the Ga face of the GaN substrate to have a flat face shape;
- and
- detaching the jig from the GaN substrate.
Dependencies are inferred from the claim text.