Light-emitting diodes (leds) with monolithically-integrated photodetectors for in situ real-time intensity monitoring
AssigneeThe University of Hong Kong
InventorsHoi Wai CHOI, Kwai Hei LI, Haitao LU
Life of this patent
Estimating the term…
Abstract
A device includes a light-emitting diode (LED) integrated with a photodetector on the same semiconductor platform, such that the photocurrent generated by the photodetector can be used to monitor the optical output of the LED, which is located adjacent to the photodetector. The device provides a compact, robust, reliable and low-cost way of monitoring LED emission.
Claims25
A light-emitting diode device, comprising:
- a light-emitting diode, configured to emit light;
- and
- a photodetector, configured to receive light emitted by the light-emitting diode and to generate a current corresponding to emission intensity of the light-emitting diode;
- wherein the light-emitting diode and the photodetector are disposed in a same layer of the light-emitting diode device corresponding to a single semiconductor platform.
8-28. (canceled)
A device, comprising a plurality of light-emitting diode devices, wherein each light-emitting diode device comprises:
- a light-emitting diode, configured to emit light;
- and
- a photodetector, configured to receive light emitted by the light-emitting diode and to generate a current corresponding to emission intensity of the light-emitting diode;
- wherein the light-emitting diode and the photodetector are disposed in a same layer of the light-emitting diode device corresponding to a single semiconductor platform.
A method of fabricating a light-emitting diode device, the method comprising:
- depositing an n-type semiconductor layer on a top surface of a substrate;
- depositing an active layer on the n-type semiconductor layer, the active layer comprising a plurality of quantum wells;
- depositing a p-type semiconductor layer on the active layer;
- etching the n-type semiconductor, active, and p-type semiconductor layers to form trenches between a light-emitting diode and a photodetector, wherein the light-emitting diode and the photodetector are electrically isolated from one another by the trenches.
Dependencies are inferred from the claim text.