Light-emitting diode comprising at least one wider bandgap intermediate layer placed in at least one barrier layer of the light-emitting zone

A light emitting diode comprising:

• a first layer comprising an n-doped semiconductor and a second layer comprising a p-doped semiconductor, the first and second layers forming a p-n junction;
• an active zone disposed between the first and second layers, comprising at least one emissive layer including InXGa1-XN and configured to form a quantum well, and at least two barrier layers including InYGa1-YN and between which the emissive layer is disposed, with X and Y being real numbers such that 0<Y<X;
• and
• an intermediate layer, disposed in the barrier layer lying between the emissive layer and the first layer such that parts of said barrier layer are disposed on either side of the intermediate layer, or disposed between said barrier layer and the emissive layer, the intermediate layer including a III-N type semiconductor the band gap of which is higher than that of the semiconductor of said barrier layer;
• wherein:
• the second layer includes GaN and the first layer includes InVGa1-VN, with V being a real number such that 0<V;
• or
• the second layer includes InWGa1-WN and the first layer includes InVGa1-VN, with V and W being real numbers such that 0<W<Y and 0<W<V.