US 2019/0157499 A1 · SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Abstract

Disclosed is a semiconductor device comprising a thin film transistor and wirings connected to the thin film transistor, in which the thin film transistor has a channel formation region in an oxide semiconductor layer, and a copper metal is used for at least one of a gate electrode, a source electrode, a drain electrode, a gate wiring, a source wiring, and a drain wiring. The extremely low off current of the transistor with the oxide semiconductor layer contributes to reduction in power consumption of the semiconductor device. Additionally, the use of the copper metal allows the combination of the semiconductor device with a display element to provide a display device with high display quality and negligible defects, which results from the low electrical resistance of the wirings and electrodes formed with the copper metal.

Claims52

Dependent claims

(canceled)

A semiconductor device comprising:

a semiconductor layer;
a first electrode over and electrically connected to the semiconductor layer;
a second electrode over and electrically connected to the semiconductor layer;
a first insulating layer over the first electrode and the second electrode;
an organic resin layer over the first insulating layer;
and
a pixel electrode over the organic resin layer and electrically connected to the second electrode,
wherein:
each of the first electrode and the second electrode comprises:
a first barrier layer;
a conductive layer comprising a region in contact with an upper surface of the first barrier layer and comprising copper;
and
a second barrier layer comprising a region in contact with an upper surface of the conductive layer;
the pixel electrode comprises a region in contact with an upper surface of the second barrier layer of the second electrode;
the first insulating layer comprises silicon nitride;
the semiconductor layer comprises:
a first region not overlapping with any of the first electrode and the second electrode;
a second region overlapping with the first electrode;
and
a third region overlapping with the second electrode;
the first region of the semiconductor layer is positioned between the second region of the semiconductor layer and the third region of the semiconductor layer;
the first insulating layer comprises a region in contact with the first region of the semiconductor layer;
and
the first region of the semiconductor layer is thinner than the second region of the semiconductor layer and the third region of the semiconductor layer.

21 more elements

A method for manufacturing a semiconductor device, comprising the steps of:

forming a semiconductor layer;
forming a first conductive layer comprising copper over the semiconductor layer;
forming a resist mask over the first conductive layer;
forming a first electrode and a second electrode over the semiconductor layer by etching the first conductive layer with use of the resist mask;
forming a first insulating layer comprising a silicon nitride over the first electrode and the second electrode;
forming an organic resin layer over the first insulating layer;
and
forming a pixel electrode over the organic resin layer and electrically connected to the second electrode,
wherein:
a first region of the semiconductor layer does not overlap with any of the first electrode and the second electrode;
a second region of the semiconductor layer overlaps with the first electrode;
a third region of the semiconductor layer overlaps with the second electrode;
the first region of the semiconductor layer is positioned between the second region of the semiconductor layer and the third region of the semiconductor layer;
the first region of the semiconductor layer is etched and made thinner than the second region of the semiconductor layer and the third region of the semiconductor layer while the resist mask is provided over the first electrode and the second electrode;
the first insulating layer comprises a region in contact with an upper surface of the first region of the semiconductor layer.

12 more elements

Dependencies are inferred from the claim text.

Facts

Application

16/196,045Filed 20 Nov 2018

Priority

JP 2009-27078427 Nov 2009

Published

23 May 2019

Term ends

Not estimatedThe source records don’t support an estimate.

Classification11 codes

H10H 20/062
Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]: light-emitting…
H10D 30/6755
Characterised by the active materials: oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
H10D 86/423
Having a particular composition, shape or crystalline structure of the active layer: comprising semiconductor materials not belonging to the Group…
H10D 86/441
Characterised by multiple TFTs: interconnections, e.g. scanning lines

Family

Application12/954,181Continuation · filed 24 Nov 2010

Application13/899,736Continuation · filed 22 May 2013

Application15/685,005Continuation · filed 24 Aug 2017

Application16/196,045Continuation

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