Tandem Solar Cell Including Metal Disk Array
AssigneeKorea Research Institute of Standards and Science
InventorsSang-Jun LEE, Jun-Oh KIM, Yeongho KIM, Sang-Woo KANG
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Abstract
A tandem solar cell includes a substrate a plurality of sub-cells stacked on the substrate and configured to sequentially perform photoelectric conversion with different wavelength band, and a metal disk array disposed on at least one of interfaces between adjacent sub-cells. A center wavelength of wavelength bands corresponding to the sub-cells gradually decreases as progressing downward with respect to an uppermost layer. The metal disk array reflects a light transmitting a sub-cell disposed over the metal disk array without being absorbed therein. The metal disk array is inserted by means of wafer bonding.
Claims18
A tandem solar cell comprising:
- a substrate;
- a plurality of sub-cells stacked on the substrate and configured to sequentially perform photoelectric conversion with different wavelength band;
- and
- a metal disk array disposed on at least one of interfaces between adjacent sub-cells,
- wherein:
- a center wavelength of wavelength bands corresponding to the sub-cells gradually decreases as progressing downward with respect to an uppermost layer,
- the metal disk array reflects a light transmitting a sub-cell disposed over the metal disk array without being absorbed therein, and
- the metal disk array is inserted by means of wafer bonding.
A method of fabricating a tandem solar cell, comprising:
- sequentially laminating a first AlAs sacrificial layer, a first sub-cell, a GaAs tunnel junction layer, and a second sub-cell on a GaAs substrate;
- sequentially laminating a second AlAs sacrificial layer, a third sub-cell, an InGaAs tunnel junction layer, and a fourth sub-cell on the InP substrate;
- forming an auxiliary metal electrode layer on the fourth sub-cell of the InP substrate;
- patterning the InP substrate on which the auxiliary metal electrode layer is formed;
- sequentially laminating a metal seed layer and a metal electrode layer on a flexible film substrate;
- bonding the metal electrode layer of the flexible film substrate to the auxiliary metal electrode layer of the patterned InP substrate;
- removing the second AlAs sacrificial layer disposed between the InP substrate and the third sub-cell to remove the InP substrate from the bonded InP substrate and flexible film substrate;
- forming a metal disk array on the third sub-cell in the flexible film substrate;
- locating the metal disk array and the second sub-cell to face each other and compressing the metal disk array and the second sub-cell to be bonded to each other;
- removing the first AlAs sacrificial layer disposed between the GaAs substrate and the first sub-cell to remove the GaAs substrate;
- and
- forming a metal finger electrode pattern on the exposed first sub-cell.
Dependencies are inferred from the claim text.