Optical waveguide integrated light receiving element and method of manufacturing the same
AssigneeNippon Telegraph and Telephone Corporation
InventorsMasahiro NADA, Yoshifumi MURAMOTO, Hideaki MATSUZAKI
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Abstract
An optical waveguide integrated light receiving element includes an optical waveguide (105) arranged on a side of a second contact layer (102) opposite to a side where a light absorption layer (103) is arranged, having a waveguide direction parallel to a plane of the light absorption layer (103), and optically coupled with the second contact layer (102). The second contact layer (102) has, in a planar view, a size of an area smaller than that of the light absorption layer (103) and arranged inside the light absorption layer (103).
Claims5
An optical waveguide integrated light receiving element comprising:
- a first contact layer made of a compound semiconductor of a first conductivity type;
- a second contact layer made of a compound semiconductor of a second conductivity type;
- a light absorption layer made of a compound semiconductor and formed between the first contact layer and the second contact layer;
- a multiplication layer made of a compound semiconductor and formed between the light absorption layer and one of the first contact layer and the second contact layer;
- and
- an optical waveguide arranged on a side of the second contact layer opposite to a side where the light absorption layer is arranged, having a waveguide direction parallel to a plane of the light absorption layer, and optically coupled with the second contact layer,
- wherein the second contact layer has, in a planar view, a size of an area smaller than that of the light absorption layer, and arranged inside the light absorption layer in the planar view.
A method of manufacturing an optical waveguide integrated light receiving element, comprising:
- a first step of producing, on a substrate, a light receiving element including:
- a first contact layer made of a compound semiconductor of a first conductivity type;
- a second contact layer made of a compound semiconductor of a second conductivity type;
- a light absorption layer made of a compound semiconductor and formed between the first contact layer and the second contact layer;
- and
- a multiplication layer made of a compound semiconductor and formed between the light absorption layer and one of the first contact layer and the second contact layer,
- wherein the second contact layer has, in a planar view, a size of an area smaller than that of the light absorption layer, and arranged inside the light absorption layer;
- a second step of producing an optical waveguide substrate including an optical waveguide;
- and
- a third step of wafer-bonding the substrate and the optical waveguide substrate and obtaining a state in which the optical waveguide is arranged on a side of the second contact layer opposite to a side where the light absorption layer is arranged, the optical waveguide has a waveguide direction parallel to a plane of the light absorption layer, and is optically coupled with the second contact layer.
Dependencies are inferred from the claim text.