Schottky diode and method for making the same
AssigneesTsinghua University, Hon Hai Precision Industry Co., Ltd.
InventorsYU-DAN ZHAO, XIAO-YANG XIAO, YING-CHENG WANG, YUAN-HAO JIN, TIAN-FU ZHANG, QUN-QING LI
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Abstract
A Schottky diode includes an insulating substrate and at least one Schottky diode unit. The at least one Schottky diode unit is located on a surface of the insulating substrate. The at least one Schottky diode unit includes a first electrode, a semiconductor structure and a second electrode. The semiconductor structure comprising a first end and a second end. The first end is laid on the first electrode; the second end is located on the surface of the insulating substrate. The semiconducting structure is nano-scale semiconductor structure. The second electrode is located on the second end.
Claims16
A Schottky diode comprising:
- an insulating substrate and at least one Schottky diode unit, the at least one Schottky diode unit being located on a surface of the insulating substrate, wherein each of the at least one Schottky diode unit comprises:
- a first electrode located on the surface of the insulating substrate;
- a semiconductor structure comprising a first end and a second end opposite to the first end, the first end is placed on a surface of the first electrode away from the insulating substrate, and the first electrode is located between the first end of the semiconductor structure and the surface of the insulating substrate, the second end of the semiconductor structure is located on the surface of the insulating substrate, and the semiconductor structure is a nano-scale semiconductor structure;
- and
- a second electrode located on the second end of the semiconductor structure, and the second end of the semiconductor structure is located between the second electrode and the surface of the insulating substrate.
A method for making a Schottky diode comprising:
- providing an insulating substrate, and forming a first electrode on a surface of the insulating substrate;
- forming a semiconductor structure on the first electrode and the insulating substrate, wherein the semiconductor structure comprises a first end and a second end opposite to the first end, the first end of the semiconductor structure is disposed on a surface of the first electrode away from the insulating substrate, and the second end is disposed on the surface of the insulating substrate;
- and
- forming a second electrode on the second end of the semiconductor structure, and the second end being located between the second electrode and the insulating substrate.
Dependencies are inferred from the claim text.