Semiconductor device and manufacturing method thereof
AssigneeMitsubishi Electric Corporation
InventorsShigeto HONDA, Fumihito MASUOKA, Yuki HARAGUCHI
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Abstract
The semiconductor device according to the present invention includes: an n-type semiconductor substrate; a p-type anode layer provided in a front surface of the n-type semiconductor substrate; an anode electrode provided on the p-type anode layer; and a wire connected to the anode electrode, the p-type anode layer includes: a p+-type anode layer disposed to include a position right under a portion where the wire is connected; and a p−-type anode layer disposed to exclude the position right under the portion where the wire is connected, and an impurity concentration of the p+-type anode layer is higher than an impurity concentration of the p−-type anode layer.
Claims7
A semiconductor device comprising:
- an n-type semiconductor substrate;
- a p-type anode layer provided in a front surface of the n-type semiconductor substrate;
- an anode electrode provided on the p-type anode layer;
- and
- a wire connected to the anode electrode,
- wherein the p-type anode layer includes:
- a first p-type anode layer disposed to include a position right under a portion where the wire is connected;
- and
- a second p-type anode layer disposed to exclude the position right under the portion where the wire is connected, and
- wherein an impurity concentration of the first p-type anode layer is higher than an impurity concentration of the second p-type anode layer.
A method of manufacturing a semiconductor device, the method comprising the steps of:
- (a) preparing an n-type semiconductor substrate;
- (b) forming a p-type anode layer in a front surface of the n-type semiconductor substrate;
- (c) forming an anode electrode on the p-type anode layer;
- and
- (d) connecting a wire to the anode electrode,
- wherein the p-type anode layer includes:
- a first p-type anode layer disposed to include a position right under a portion where the wire is connected;
- and
- a second p-type anode layer disposed to exclude the position right under the portion where the wire is connected, and
- wherein an impurity concentration of the first p-type anode layer is higher than an impurity concentration of the second p-type anode layer.
Dependencies are inferred from the claim text.