Multi-channel thin film transistor and pixel including the same
AssigneeSamsung Display Co., Ltd.
InventorHwangsup Shin
Life of this patent
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Abstract
A multi-channel thin film transistor (“TFT”) includes: a gate electrode; a semiconductor including a first channel area, which operates within a first driving range and has a first threshold voltage, and a second channel area which operates within a second driving range smaller than the first driving range and has a second threshold voltage, where an absolute value of the second threshold voltage is greater than an absolute value of the first threshold voltage; a first electrode connected to an end of the semiconductor; and a second electrode connected to another end of the semiconductor.
Claims20
A multi-channel thin film transistor comprising:
- a gate electrode;
- a semiconductor comprising a first channel area overlapping the gate electrode and a second channel area overlapping the gate electrode;
- and
- a first ratio of a channel width of the first channel area to a channel length of the first channel area and a second ratio of a channel width of the second channel area to a channel length of the second channel area are different from each other.
A multi-channel thin film transistor comprising:
- a first sub-transistor comprising a first semiconductor comprising a first channel area;
- a second sub-transistor comprising a second semiconductor comprising a second channel area;
- wherein the first sub-transistor and the second sub-transistor share a gate electrode,
- wherein the first semiconductor and the second semiconductor are connected each other in parallel, and
- wherein a ratio of a channel width of the first channel area to a channel length of the first channel area, and a ratio of a channel width of the second channel area to a channel length of the second channel area are different from each other.
Dependencies are inferred from the claim text.