Tft structure based on flexible multi-layer graphene quantum carbon substrate material and method for manufacturing same
AssigneeGuang Dong Dongbond Technology Co., Ltd.
InventorPing LIU
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AssigneeGuang Dong Dongbond Technology Co., Ltd.
InventorPing LIU
Estimating the term…
A TFT structure based on a flexible multi-layer graphene quantum carbon substrate material and a method for manufacturing the same. The TFT structure includes a multi-layer graphene quantum carbon substrate, a first source, a first drain, a first gate insulating layer, and a first gate. The multi-layer graphene quantum carbon substrate includes a first channel area, and a first drain area and a first source area that are located at corresponding recessed positions on the multi-layer graphene quantum carbon substrate that are separated from each other. The first channel area is located between the first drain area and the first source area, the first source is filled in the first source area, the first drain is filled in the first drain area, the first gate insulating layer is disposed on the first channel area, and the first gate is disposed on the first gate insulating layer.
A thin film transistor (TFT) structure based on a flexible multi-layer graphene quantum carbon substrate material, comprising:
Dependencies are inferred from the claim text.