Laser beam irradiation device, thin-film transistor, and method of manufacturing thin-film transistor
AssigneeV Technology Co., Ltd.
InventorMichinobu Mizumura
Life of this patent
Estimating the term…
Abstract
A laser beam irradiation device includes a light source that emits a laser beam; and a projection lens that irradiates a plurality of different areas of an amorphous silicon thin film attached to a thin-film transistor with the laser beam, wherein the projection lens irradiates the plurality of different areas of the amorphous silicon thin film with the laser beam such that a source electrode and a drain electrode of the thin-film transistor are connected in parallel to each other by a plurality of channel regions.
Claims17
A laser beam irradiation device comprising:
- a light source that emits a laser beam;
- and
- a projection lens that irradiates a plurality of different areas of an amorphous silicon thin film attached to a thin-film transistor with the laser beam,
- wherein the projection lens irradiates the plurality of different areas of the amorphous silicon thin film with the laser beam such that a source electrode and a drain electrode of the thin-film transistor are connected in parallel to each other by a plurality of channel regions.
A thin-film transistor comprising:
- a source electrode and a drain electrode formed on a glass substrate;
- and
- a plurality of channel regions formed between the source electrode and the drain electrode,
- wherein the plurality of channel regions are formed of a polycrystalline silicon thin film formed by performing laser annealing on an amorphous silicon thin film, and
- the source electrode and the drain electrode are connected in parallel to each other by the plurality of channel regions.
A method of manufacturing a thin-film transistor comprising:
- a first step of forming a polycrystalline silicon thin film by irradiating a first area of an amorphous silicon thin film attached between a source electrode and a drain electrode included in a thin-film transistor with a laser beam;
- and
- a second step of forming the polycrystalline silicon thin film by irradiating a second area of the amorphous silicon thin film with the laser beam after irradiating the first area with the laser beam,
- wherein the second step includes irradiating the second area different from the first area in the amorphous silicon thin film with the laser beam such that the source electrode and the drain electrode are connected in parallel to each other by a plurality of amorphous silicon thin films.
Dependencies are inferred from the claim text.