Array substrate manufacturing method

Abstract

This application discloses a method for manufacturing an array substrate. The array substrate manufacturing method includes: providing a first substrate; forming gate layers on the first substrate; forming a gate insulation layer on the first substrate, and covering the gate layers; forming an amorphous silicon layer on the gate insulation layer; forming a metal layer on the amorphous silicon layer; forming a photo-sensitive photoresist layer on the metal layer; etching the amorphous silicon layer by using inert gas or nitrogen plasma, to form a groove; forming source layers and a drain layer; removing the photo-sensitive photoresist layer; and forming a passivation layer on the source layers, where a baking process is performed on the photo-sensitive photoresist layer, so that the photo-sensitive photoresist layer flows to some extent so as to form a protection layer, so as to cover the metal layer in a non-active switch channel region.

Dependencies are inferred from the claim text.