Back to results
US 2019/0157454 A1Published application
Thin film transistor and manufacture method thereof
AssigneeBoe Technology Group Co., Ltd.
InventorsDong Li, Yucheng Chan
Life of this patent
Estimating the term…
Abstract
Disclosed are a thin film transistor and a manufacture method thereof. The thin film transistor according to the embodiments of the present disclosure comprises: a base substrate; an active layer composed of polysilicon on the base substrate; and a first gate insulating layer having a preset intrinsic tensile stress on the active layer.
Claims20
A thin film transistor comprising:
- a base substrate;
- an active layer composed of polysilicon on the base substrate;
- and
- a first gate insulating layer having a preset intrinsic tensile stress on the active layer.
1 more element
Dependencies are inferred from the claim text.