Semiconductor device having vertical channel
AssigneeSamsung Electronics Co., Ltd.
InventorsShin Hye Kim, Kyung Seok Oh, Gu Young Cho, Sang Jin Hyun
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Abstract
A semiconductor device includes a substrate and a plurality of semiconductor fins protruding from the substrate. Source/drain regions are disposed at tops of respective ones of the semiconductor fins, each having a width greater than a width of individual ones of the semiconductor fins. A gate electrode is disposed on side surfaces of the semiconductor fins below the source/drain regions. Insulating layers contact the side surfaces of the semiconductor fins and cover upper surfaces of the gate electrode.
Claims21
A semiconductor device comprising:
- a substrate;
- a plurality of semiconductor fins protruding from the substrate;
- source/drain regions disposed at tops of respective ones of the semiconductor fins and each having a width greater than a width of individual ones of the semiconductor fins;
- a gate electrode disposed on side surfaces of the semiconductor fins below the source/drain regions;
- and
- insulating layers contacting the side surfaces of the semiconductor fins and covering upper surfaces of the gate electrode.
-14. (canceled)
A semiconductor device comprising:
- a substrate;
- a semiconductor fin protruding from the substrate;
- a semiconductor layer on a top of the semiconductor fin;
- a gate electrode on a side surface of the semiconductor fin;
- and
- a spacer in contact with the side surface of the semiconductor fin between the semiconductor layer and an upper surface of the gate electrode.
A semiconductor device comprising:
- a substrate including a first region and a second region;
- first semiconductor fins protruding from the first region of the substrate;
- second semiconductor fins protruding from the second region of the substrate;
- respective first semiconductor layers disposed at tops of the first semiconductor fins, each having a width greater than a width of individual ones of the first semiconductor fins;
- respective second semiconductor layers disposed on the second semiconductor fins, each having a width greater than a width of individual ones of the second semiconductor fins;
- a first gate electrode on side surfaces of the first semiconductor fins below the first semiconductor layers;
- a second gate electrode on side surfaces of the second semiconductor fins below the second semiconductor layer;
- first spacers contacting the side surfaces of the first semiconductor fins and covering upper surfaces of the first gate electrode;
- and
- second spacers contacting the side surfaces of the second semiconductor fins and covering upper surfaces of the second gate electrode,
- wherein a vertical length of the first gate electrode is less than a vertical length of the second gate electrode, and wherein a thickness of each of the first spacers is identical to a thickness of each of the second spacers.
Dependencies are inferred from the claim text.