Laterally double diffused metal oxide semiconductor (ldmos) device on fully depleted silicon on insulator (fdsoi) enabling high input voltage

A structure comprising:

• a substrate composed of at least one well structure;
• a buried oxide layer over the substrate, the buried oxide layer being a gate dielectric material of a transistor of a laterally double diffused semiconductor device;
• a semiconductor on insulator material over the buried oxide layer, the semiconductor on insulator material being a channel region of the transistor;
• and
• source and drain regions with respective contacts provided above the buried oxide layer,
• wherein a gate terminal placed at a hybrid section is used as a back-gate voltage to control the channel and the drift region of the transistor.

A method comprising:

• patterning a buried insulator material of a semiconductor on insulator (SOI) technology to be a gate dielectric of a laterally double diffused semiconductor device;
• patterning a semiconductor material of the SOI technology to be a channel region of the laterally double diffused semiconductor device;
• forming a well under the buried insulator material;
• forming source/drain regions on a front side of the buried insulator material;
• and
• epitaxially growing contacts on the source/drain regions.