Semiconductor Device Having Contact Trenches Extending from Opposite Sides of a Semiconductor Body

A semiconductor device, comprising:

• a semiconductor body including a first side and a second side opposite to the first side, the semiconductor body comprising a semiconductor material of a first conductivity type;
• a gate formed at the first side;
• a first contact trench extending through a first dielectric and into the semiconductor body at the first side, wherein the first contact trench includes a first conductive material electrically connected to the semiconductor body adjoining the first contact trench via sidewalls of the first contact trench;
• a second contact trench extending through a second dielectric and into the semiconductor body at the second side, wherein the second contact trench includes a second conductive material;
• a first contact pattern laterally completely surrounded by the first dielectric at the first side;
• and
• a second contact pattern laterally completely surrounded by the second dielectric at the second side,
• wherein lower sidewall portions of the second contact trench that extend between the second side and a bottom side of the contact trench directly interface with the semiconductor body,
• wherein the second conductive material is electrically connected to the semiconductor body via the lower sidewall portions of the second contact trench,
• wherein the second conductive material is electrically connected to a first semiconductor region of the first conductivity type via the lower sidewall portions of the second contact trench;
• and wherein the second conductive material is electrically connected to a second semiconductor region of a second conductivity type via the bottom side of the second contact trench.

A semiconductor device, comprising:

• a semiconductor body including a first side and a second side opposite to the first side, the semiconductor body comprising a semiconductor material of a first conductivity type;
• a gate formed at the first side;
• a first contact trench extending through a first dielectric and into the semiconductor body at the first side, wherein the first contact trench includes a first conductive material electrically connected to the semiconductor body adjoining the first contact trench via sidewalls of the first contact trench;
• a second contact trench extending through a second dielectric and into the semiconductor body at the second side, wherein the second contact trench includes a second conductive material;
• a first contact pattern laterally completely surrounded by the first dielectric at the first side;
• and
• a second contact pattern laterally completely surrounded by the second dielectric at the second side,
• wherein lower sidewall portions of the second contact trench that extend between the second side and a bottom side of the contact trench directly interface with the semiconductor body,
• wherein the second conductive material is electrically connected to the semiconductor body via the lower sidewall portions of the second contact trench,
• wherein the second conductive material is electrically connected to a first semiconductor region of a second conductivity type via the lower sidewall portions of the second contact trench;
• and the second conductive material is electrically coupled to a second semiconductor region of the first conductivity type via the bottom side of the second contact trench.