Semiconductor Device Having a Source Electrode Contact Trench

A semiconductor device, comprising a semiconductor body and at least one device cell integrated in the semiconductor body, the at least one device cell comprising:

• a drift region, a source region, and a body region arranged between the source region and the drift region;
• a gate trench extending from a first surface of the semiconductor body, through the source region and the body region and into the drift region;
• a diode region extending under the gate trench;
• a pn junction between the diode region and the drift region below the gate trench;
• a gate electrode arranged in the gate trench and dielectrically insulated from the source region, the body region, the diode region and the drift region by a gate dielectric;
• a contact trench spaced apart from the gate trench and extending from the first surface of the semiconductor body into the source region;
• and
• a source electrode arranged in the contact trench and adjoining the source region at a sidewall of the contact trench.