Method for fabricating semiconductor device
AssigneeUnited Microelectronics Corp.
InventorsChun-Hao Lin, Hsin-Yu Chen, Shou-Wei Hsieh
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Abstract
A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region and a second fin-shaped structure on the second region; forming a first buffer layer on the first fin-shaped structure and the second fin-shaped structure; removing the first buffer layer on the first region; and performing a curing process so that a width of the first fin-shaped structure is different from a width of the second fin-shaped structure.
Claims10
A method for fabricating semiconductor device, comprising:
- providing a substrate having a first region and a second region;
- forming a first fin-shaped structure on the first region and a second fin-shaped structure on the second region;
- forming a first buffer layer on the first fin-shaped structure and the second fin-shaped structure;
- removing the first buffer layer on the first region;
- forming an insulating layer on the first region and the second region;
- and
- performing a curing process to combine the first buffer layer and the insulating layer into one unit and so that a width of the first fin-shaped structure is different from a width of the second fin-shaped structure.
Dependencies are inferred from the claim text.