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US 2019/0157441 A1Published application
Semiconductor device and semiconductor device manufacturing method
AssigneeFujitsu Limited
InventorAtsushi Yamada
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a substrate, a channel layer containing GaN formed above the substrate, a barrier layer containing Inx1Aly1Ga1-x1- y1N (0.00≤x1≤0.20, 0.60≤y1≤1.00) formed above the channel layer, an intermediate layer containing Inx2Aly2Ga1-x2-y2N (0.00≤x2≤0.04, 0.30≤y2≤0.60) formed on the barrier layer, and a cap layer containing GaN formed on the intermediate layer.
Claims14
A semiconductor device comprising:
- a channel layer formed above a substrate, the channel layer containing GaN;
- a barrier layer formed above the channel layer, the barrier layer containing Inx1Aly1Ga1-x1-y1N (0.00≤x1≤0.20, 0.60≤y1≤1.00);
- an intermediate layer formed on the barrier layer, the intermediate layer containing Inx2Aly2Ga1-x2-y2N (0.00≤x2<0.04, 0.30≤y2≤0.60);
- and
- a cap layer formed on the intermediate layer, the cap layer containing GaN.
2 more elements
A method of manufacturing a semiconductor device comprising:
- forming, above a substrate, a channel layer containing GaN;
- forming, above the channel layer, a barrier layer containing Inx1Aly1Ga1-x1-y1N (0.00≤x1≤0.20, 0.60≤y1≤1.00);
- forming, on the barrier layer, an intermediate layer containing Inx2Aly2Ga1-x2-y2N (0.00≤x2<0.04, 0.30≤y2≤0.60);
- and
- forming, on the intermediate layer, a cap layer containing GaN.
2 more elements
Dependencies are inferred from the claim text.