Semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorToshiyuki Matsui
Life of this patent
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Abstract
There is provided a semiconductor device including a transistor portion and a diode portion. The transistor portion has a first-conductivity-type drift region formed inside a semiconductor substrate, a second-conductivity-type base region provided above the drift region inside the semiconductor substrate, and a second-conductivity-type collector region provided below the drift region inside the semiconductor substrate. The transistor portion has a second-conductivity-type well region provided inside the semiconductor substrate and extending downward beyond the base region and an injection amount restricting portion occupying at least a part of a region that is positioned below the well region and having a smaller second-conductivity-type carrier injection amount per unit area than the collector region.
Claims10
A semiconductor device comprising a transistor portion and a diode portion,
- the transistor portion having:
- a first-conductivity-type drift region formed inside a semiconductor substrate;
- a second-conductivity-type base region provided above the drift region inside the semiconductor substrate;
- and a second-conductivity-type collector region provided below the drift region inside the semiconductor substrate, and
- the transistor portion having a second-conductivity-type well region provided inside the semiconductor substrate and extending downward beyond the base region, and
- the transistor portion having an injection amount restricting portion occupying at least a part of a region that is positioned below the well region, the injection amount restricting portion having a smaller second-conductivity-type carrier injection amount per unit area than the collector region.
Dependencies are inferred from the claim text.