Thin film transistor and manufacturing method thereof

A manufacturing method of a thin film transistor, comprising:

• step S21, selecting a substrate, and forming a bottom gate, a gate insulating layer and a source-drain from bottom to top in sequence above the selected substrate, wherein the source-drain adopts a conductive metal oxide with an adjustable work function as a metal conducting electrode;
• step S22, rinsing and drying the source-drain of the selected substrate, performing ozone cleaning to the dried source-drain for a predetermined time under a predetermined illumination condition, and bombarding the source-drain after the ozone cleaning with oxygen plasma for a period of time, and further forming an active layer made of a carbon material over the source-drain after the oxygen plasma bombardment;
• step S23, forming a passivation layer over the active layer after the preparation of the active layer is completed;
• wherein the step S21 specifically comprises:
• placing a substrate made of a selected plastic in acetone and isopropanol, ultrasonic cleaning and then drying with nitrogen, when the substrate made of the plastic is selected;
• forming a patterned photoresist on the selected plastic substrate by UV lithography and a conductive metal oxide with a thickness of fourth threshold deposited as the bottom gate by RF magnetron sputtering, patterning the bottom gate by de-photoresist, and then depositing a non-transparent insulating material with a thickness of fifth threshold as the gate insulating layer by atomic force deposition technique, and patterning the gate insulating layer through ultraviolet lithography and phosphoric acid wet-etching technology;
• depositing a conductive metal oxide with a thickness of sixth threshold as the source-drain by magnetron sputtering, after the preparation of the gate insulating layer above the substrate made of the selected plastic is completed, wet-etching an exposing indium tin oxide with phosphoric acid, after the photoresist is coated and the photoresist on the coating is patterned by UV lithography, and preparing a source-drain pattern by removing the photoresist of the unexposed conductive metal oxide.

A manufacturing method of a thin film transistor, comprising;

• step S31, selecting a substrate, and forming a source-drain on the selected substrate;
• wherein the source-drain adopts a conductive metal oxide with an adjustable work function as a metal conducting electrode;
• step S32, rinsing and drying the source-drain of the selected substrate, performing ozone cleaning to the dried source-drain for a predetermined time under a predetermined illumination condition, and bombarding the source-drain after the ozone cleaning with oxygen plasma for a period of time, and further forming an active layer made of a carbon material over the source-drain after the oxygen plasma bombardment;
• and
• step 33, sequentially forming a passivation layer and a top gate from bottom to top on the active layer, after the active layer is prepared.