Semiconductor device and fabrication method thereof
AssigneesSemiconductor Manufacturing International (Shanghai) Corporation, SMIC New Technology Research and Development (Shanghai) Corporation
InventorsYi Qun LIU, Yong Gen HE
Life of this patent
Estimating the term…
Abstract
Semiconductor device and fabrication method are provided. The method includes: providing a base substrate having a gate structure formed thereon; forming initial trenches in the base substrate on sides of each gate structure; smoothing inner wall surfaces of the initial trenches to form trenches from the initial trenches, wherein a corner between a bottom surface and a sidewall of each trench is rounded; forming a seed layer on inner walls of each trench, wherein the seed layer covers all inner walls of each trench; and forming source/drain layers on surfaces of the seed layers in the trenches.
Claims20
A fabrication method of a semiconductor device, comprising:
- providing a base substrate having a gate structure formed thereon;
- forming initial trenches in the base substrate on sides of each gate structure;
- smoothing inner wall surfaces of the initial trenches to form trenches from the initial trenches, wherein a corner between a bottom surface and a sidewall of each trench is rounded;
- forming a seed layer on inner walls of each trench, wherein the seed layer covers all inner walls of each trench;
- and
- forming source/drain layers on surfaces of the seed layers in the trenches.
A semiconductor device, comprising:
- a base substrate;
- gate structures on the base substrate, wherein the base substrate contains trenches formed on sides of each gate structure, and a corner between a bottom surface and a sidewall of each trench is rounded;
- a seed layer formed on inner walls of each trench, wherein the seed layer covers all of the inner walls of each trench;
- and
- source/drain layers formed on the seed layers in the trenches.
Dependencies are inferred from the claim text.