Method for fabricating a field-effect transistor
AssigneesCommissariat A L'energie Atomique Et Aux Energies Alternatives, International Business Machines Corporation
InventorsShay REBOH, Emmanuel AUGENDRE, Remi COQUAND, Nicolas LOUBET
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Abstract
The method for fabricating a field-effect transistor comprises a step of producing a sacrificial gate and first and second spacers covering first, second and third parts of successive first to fifth semiconductor nanowires of a stack. The fabricating method comprises a step of forming a channel area of the transistor, which channel area is compressively stressed and distinct from the second part of the third nanowire. The channel area is connected to a source electrode of the transistor by the first part of the second nanowire, and to a drain electrode of the transistor by the third part of the second nanowire.
Claims13
Method for fabricating a field-effect transistor, comprising:
- a step of forming, on a substrate a stack comprising successive first to fifth semiconductor nanowires,
- a step of producing a sacrificial gate and first and second spacers arranged on either side of the sacrificial gate, the sacrificial gate and the first and second spacers covering a part of the stack comprising first, second and third parts of each of the first to fifth nanowires,
- a step of removing the sacrificial gate,
- a step of removing the second parts of the first and fifth nanowires, which second parts are made accessible by the step of removing the sacrificial gate, this step of removing the second parts of the first and fifth nanowires resulting in the suspension of an assembly formed by the second parts of the second to fourth nanowires between the first and second spacers,
- a step of forming a channel area of the transistor, which channel area is compressively stressed and distinct from the second part of the third nanowire, said channel area being connected:
- to a source electrode of the transistor by the first part of the second nanowire, and
- to a drain electrode of the transistor by the third part of the second nanowire, and
- a step of producing a gate electrode of the transistor between the first and second spacers and around the channel area.
Electronic device comprising a field-effect transistor having first and second spacers between which is arranged a gate electrode of the transistor, the first and second spacers being located between a source electrode of the transistor and a drain electrode of the transistor, said transistor comprising at least one semiconductor nano-object connecting the source electrode to the drain electrode, a first part of the nano-object being located under the first spacer, and a second part of the nano-object connecting the first part of the nano-object to a third part of the nano-object, which third part is located under the second spacer, wherein:
- the first part of the nano-object is interposed between, and makes contact with, first and second semiconductor elements of the transistor, said first and second semiconductor elements preferably being compressively stressed,
- the third part of the nano-object is interposed between, and makes contact with, third and fourth semiconductor elements of the transistor, said third and fourth semiconductor elements preferably being compressively stressed,
- the first semiconductor element connects the source electrode to a compressively stressed channel area of the transistor, and the third semiconductor element connects the drain electrode to the channel area of the transistor, said channel area being distinct from the nano-object, and
- the gate electrode surrounds the channel area of the transistor.
Dependencies are inferred from the claim text.