Semiconductor chip and power module, and manufacturing method of the same
AssigneeHitachi Power Semiconductor Device, Ltd.
InventorsMasakazu SAGAWA, Takahiro MORIKAWA, Motoyuki MIYATA, Kan YASUI, Toshiaki MORITA
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Abstract
A semiconductor chip includes a semiconductor substrate made of SiC, a front surface electrode formed in a principal surface of the semiconductor substrate, and a rear surface electrode (drain electrode) formed in a rear surface of the semiconductor substrate. The front surface electrode is bonded to a wire, and includes an Al alloy film containing a high melting-point metal. The Al alloy film contains a columnar Al crystal which extends along a thickness direction of the Al alloy film, and an intermetallic compound is precipitated therein.
Claims15
A semiconductor chip comprising:
- a semiconductor substrate;
- and
- a front surface electrode which is formed in a principal surface of the semiconductor substrate,
- wherein the front surface electrode includes an Al alloy film which contains a high melting-point metal, and
- the Al alloy film contains a columnar Al crystal along a thickness direction of the Al alloy film.
A power module comprising:
- a semiconductor chip which includes a principal surface and a rear surface on an opposite side of the principal surface, and is provided with a front surface electrode formed in the principal surface;
- a substrate which supports the semiconductor chip and includes a wiring portion;
- and
- a conductive member which electrically connects the front surface electrode of the semiconductor chip and the wiring portion of the substrate,
- wherein the front surface electrode of the semiconductor chip includes an Al alloy film which contains a high melting-point metal, and
- the Al alloy film contains a columnar Al crystal which extends along a thickness direction of the Al alloy film.
A manufacturing method of a power module, comprising:
- (a) mounting a semiconductor chip on a substrate provided with a wiring portion, the semiconductor chip including a principal surface and a rear surface on an opposite side of the principal surface, and being provided with a front surface electrode which is formed in the principal surface and includes an Al alloy film containing a high melting-point metal;
- and
- (b) electrically connecting the front surface electrode of the semiconductor chip and the wiring portion of the substrate by a conductive member after the (a),
- wherein the Al alloy film of the front surface electrode of the semiconductor chip contains a columnar Al crystal which extends along a thickness direction of the Al alloy film.
Dependencies are inferred from the claim text.