Structures and methods for noise isolation in semiconductor devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsGulbagh SINGH, Tsung-Han TSAI, Kun-Tsang Chuang
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Abstract
The present disclosure relates to a semiconductor structure includes a substrate with a top surface and first and second devices formed on the top surface of the substrate. The semiconductor structure also includes a deep isolation structure formed in the substrate and between the first and second devices. The deep isolation structure includes a top portion formed at the top surface and having a top width and a bottom surface having a bottom width larger than the top width.
Claims20
A semiconductor structure comprising:
- a substrate with a top surface;
- a first and a second devices formed on the top surface of the substrate;
- and
- a deep isolation structure formed in the substrate and between the first and second devices, wherein the deep isolation structure comprises:
- a top portion formed at the top surface and having a top width;
- and
- a bottom surface having a bottom width larger than the top width.
A semiconductor structure, comprising:
- a substrate;
- a first dielectric layer formed on the substrate;
- a second dielectric layer formed on the first dielectric layer;
- first and second semiconductor devices formed on a device layer;
- and
- a plurality of isolation structures formed in the substrate and the first and second dielectric layers, wherein each isolation structure comprises:
- a top width measured at a top surface of the second dielectric layer;
- and
- a bottom width measured at a bottom surface of the isolation structure, wherein the top width is less than the bottom width.
A method for forming a semiconductor device, the method comprising:
- providing a substrate;
- forming first and second devices on the substrate;
- etching a deep trench in the substrate and between the first and second devices, wherein a top opening of the deep trench is narrower than a bottom surface of the deep trench;
- and
- depositing a dielectric material between the first and second devices and in the deep trench.
Dependencies are inferred from the claim text.