Power Semiconductor Device Having a Field Electrode

A power semiconductor device, comprising:

• a semiconductor body configured to conduct a load current between a first load terminal and a second load terminal of the power semiconductor device;
• a source region, a channel region and a drift volume, each included in the semiconductor body, the source region being electrically connected to the first load terminal and the channel region isolating the source region from the drift volume, wherein at least a total extension of the drift volume along an extension direction defines a blocking voltage of the semiconductor device;
• a control electrode insulated from each of the semiconductor body and the load terminals and configured to control a path of the load current in the channel region;
• and
• a trench extending into the drift volume along the extension direction and including a field electrode isolated from the drift volume by a field insulator, wherein:
• an uncontacted region of the field electrode has a greater lateral extension than an uncontacted region of the control electrode;
• and/or
• the field electrode extends further along the extension direction than the control electrode;
• and/or
• a total extension of the field electrode is smaller than a total extension of the control electrode in a plane parallel to the extension direction.