Semiconductor device and manufacturing method thereof

A manufacturing method of a semiconductor device, comprising the steps of:

• preparing a substrate which has a main surface provided with an off-angle tilted in a reference crystal direction of a <11-20> direction or a <1-100> direction with respect to a main crystal surface of a (0001) surface or a (000-1) surface and has a reference mark provided so as to have a first angle error with respect to the reference crystal direction;
• preparing a photomask for forming an etching pattern on the substrate in order to form, in the substrate, a plurality of trenches extending in a first direction along the main surface of the substrate and spaced apart from each other in a second direction orthogonal to the first direction along the main surface of the substrate;
• forming the etching pattern on the substrate by using the photomask;
• forming the plurality of trenches in the substrate by using the etching pattern;
• and
• filling insides of the plurality of trenches with a crystal layer having the same crystal structure as the substrate by a crystal growth method,
• wherein, when preparing the substrate, the substrate in which the first angle error is within ±θ is selected and prepared, and
• when a depth of the trench is h, a width of the trench is w, and k is a coefficient larger than 0 and smaller than 2, the θ is determined by
• θ={arctan{k×(w/h)}}/13.

A manufacturing method of a semiconductor device, comprising the steps of:

• preparing a substrate which has a main surface provided with an off-angle tilted in a reference crystal direction of a <11-20> direction or a <1-100> direction with respect to a main crystal surface of a (0001) surface or a (000-1) surface and has a reference mark provided so as to have a first angle error with respect to the reference crystal direction;
• preparing a photomask for forming an etching pattern on the substrate in order to form, in the substrate, a plurality of trenches extending in a first direction along the main surface of the substrate and spaced apart from each other in a second direction orthogonal to the first direction along the main surface of the substrate;
• forming the etching pattern on the substrate by using the photomask;
• forming the plurality of trenches in the substrate by using the etching pattern;
• and
• filling insides of the plurality of trenches with a crystal layer having the same crystal structure as the substrate by a crystal growth method,
• wherein, when preparing the substrate, error data of the first angle error in the substrate is measured or the substrate whose error data of the first angle error is specified is prepared,
• when forming the etching pattern by using the photomask, an angle correction with respect to the reference mark is performed by exposure apparatus using the error data,
• an angle error between the reference crystal direction and the first direction is within ±θ, and
• when a depth of the trench is h, a width of the trench is w, and k is a coefficient larger than 0 and smaller than 2, the θ is determined by
• θ={arctan{k×(w/h)}}/13.