Semiconductor structure and method of preparing semiconductor structure
AssigneeEnkris Semiconductor, Inc.
InventorsPeng XIANG, Kai CHENG
Life of this patent
Estimating the term…
Abstract
The invention provides a semiconductor structure and a method of preparing a semiconductor structure, which solves the problems of easy cracking, large warpage and large dislocation density which exist in a semiconductor compound epitaxial structure epitaxially grown on a substrate in the prior art. The semiconductor structure includes: a substrate; at least one periodic structure disposed over the substrate; wherein each of the periodic structures includes at least one period, each period including a first periodic layer and a second periodic layer which are sequentially stacked in an epitaxial direction.
Claims15
A semiconductor structure, characterized in that, the semiconductor structure includes:
- a substrate;
- at least a periodic structure disposed above said substrate;
- wherein the materials of said periodic structures are semiconductor compounds, each said periodic structure includes at least one period, each said period includes a first periodic layer and a second periodic layer which are sequentially stacked in an epitaxial direction;
- wherein said first periodic layer includes a first element and a second element, said second periodic layer includes said first element and said second element;
- or, said first periodic layer includes said first element, said second element and a third element, said second periodic layer includes said first element, said second element, and said third element;
- or, said first periodic layer includes said first element and said third element, said second periodic layer includes said first element, said second element, and said third element;
- wherein the atomic number of said first element is smaller than the atomic number of said second element;
- wherein, in the same periodic structure, said first element of said first periodic layer has a percentage of the number of atoms in compound composition greater than a percentage of the number of atoms in compound composition of said first element of said second periodic layer, the thickness of the nth periodic structure is smaller than the thickness of the (n+1)th periodic structure, wherein n is an integer greater than or equal to 1.
A method of preparing a semiconductor structure, characterized in that, including:
- preparing at least one periodic structure over a substrate;
- wherein the materials of said periodic structures are semiconductor compounds, each said periodic structure includes at least one period, each said period includes a first periodic layer and a second periodic layer which are sequentially stacked in an epitaxial direction;
- wherein said first periodic layer includes a first element and a second element, said second periodic layer includes said first element and said second element;
- or, said first periodic layer includes said first element, said second element and a third element, said second periodic layer includes said first element, said second element and said third element;
- or, the first periodic layer includes said first element and said third element, said second periodic layer includes said first element, said second element and said third element;
- wherein the atomic number of said first element is smaller than the atomic number of said second element;
- wherein, in the same periodic structure, said first element of said first periodic layer has a percentage of the number of atoms in compound composition greater than the percentage of the number of atoms in compound composition of said first element of said second periodic layer, the thickness of the nth periodic structure is smaller than the thickness of the (n+1)th periodic structure, wherein n is an integer greater than or equal to 1.
Dependencies are inferred from the claim text.