Method of fabricating semiconductor device

Abstract

A method of fabricating a semiconductor device is provided. In the method, a gate structure is formed on a semiconductor substrate. A photolithography process is performed with a mask having two transparent regions to form a photoresist layer having two openings in the semiconductor substrate. A first photoresist layer of the photoresist layer between the two openings is aligned to the gate structure and formed on the gate structure. The width of the first photoresist layer is shorter than the width of the gate structure such that a first side portion and a second side portion of the gate structure are exposed from both sides of the first photoresist layer, respectively. Next, an ion implantation process is performed to form lightly doped drain regions in the semiconductor substrate which are on two opposite sides of the gate structure of the photoresist layer.

Dependencies are inferred from the claim text.