Back to results
US 2019/0157389 A1Published application
Semiconductor device and method for manufacturing same
AssigneeMitsubishi Electric Corporation
InventorsKazutoyo TAKANO, Kazushige MATSUO, Masayoshi HIRAO, Junji YAHIRO
Life of this patent
Estimating the term…
Abstract
A semiconductor device according to the present invention includes a substrate having a cell portion and a terminal portion surrounding the cell portion, a surface structure provided on the substrate, and a back surface electrode provided on the back surface of the substrate, the surface structure includes a convex portion protruding upward above the cell portion, and at least a part of the cell portion is thinner than the terminal portion.
Claims18
A semiconductor device comprising:
- a substrate including a cell portion and a terminal portion surrounding the cell portion;
- a surface structure provided on the substrate;
- and
- a back surface electrode provided on a back surface of the substrate,
- wherein the surface structure includes a convex portion protruding upward above the cell portion,
- at least a part of the cell portion is thinner than the terminal portion,
- the back surface electrode under the cell portion and the back surface electrode under the terminal portion form a concave shape,
- a lower surface of the back surface electrode under the cell portion and a lower surface of the back surface electrode under the terminal portion are smoothly connected to each other,
- the surface structure includes a surface electrode provided on the substrate, and
- the convex portion is a part of the surface electrode.
7 more elements
(canceled)
(canceled)
A method of manufacturing a semiconductor device comprising:
- a surface step of forming a surface layer on a surface side of a substrate including a cell portion and a terminal portion surrounding the cell portion;
- a surface structure step of forming a surface structure having a convex portion protruding upward above the cell portion after executing the surface step;
- a step of sticking a protective film so that the protective film covers the surface structure;
- a polishing step of polishing a back surface of the substrate while the protective film is stuck;
- a back surface step of forming a back surface semiconductor layer on a back surface side of the substrate;
- and
- a step of forming a back surface electrode on a back surface of the back surface semiconductor layer after executing the polishing step,
- wherein the convex portion is a part of a surface electrode provided on the substrate.
5 more elements
(canceled)
Dependencies are inferred from the claim text.