Super junction mosfet device and semiconductor chip

A super junction MOSFET device comprising:

• a semiconductor substrate;
• a base region that is provided on a primary surface side of the semiconductor substrate and has impurities of a first conductivity type;
• a source region that includes a portion of a frontmost surface of the base region and has impurities of a second conductivity type;
• a gate electrode that is provided above the base region in a manner to cover a partial region of the base region adjacent to the source region;
• a source electrode that is provided on the base region and is electrically connected to the source region;
• and
• a front surface region that is provided on an entirety of the frontmost surface of the base region in a region differing from the source region in the base region and the partial region covered by the gate electrode, is electrically connected to the source electrode provided on the base region, and has a lower impurity concentration of impurities of the second conductivity type than the source region.