New dual-gate trench igbt with buried floating p-type shield

An insulated gate bipolar transistor (IGBT) device supported in a semiconductor substrate wherein:

• the semiconductor substrate comprising an epitaxial layer of a first conductivity type supported on a bottom layer of a second conductivity type electrically contacting a collector electrode disposed on a bottom surface of the semiconductor substrate;
• the IGBT device further comprises a body region of the second conductivity type disposed near a top surface of the semiconductor substrate encompassing a source region of the first conductivity type below a top surface of the semiconductor substrate;
• the IGBT device further comprises a shield trench disposed in the epitaxial layer etched through the body region and the source region with a dielectric layer lining a bottom and side walls of the shield trench insulating a conductive material filling the shield trench from the epitaxial layer and a plurality of floating buried regions doped with the second conductivity type disposed immediately below the shield trench, wherein the floating buried regions are formed with the shield trench extending along a same direction.