Low substrate leakage zener diode with modulated buried junction
AssigneeTexas Instruments Incorporated
InventorsJun Cai, Binghua Hu
Life of this patent
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Abstract
In some embodiments, an apparatus comprises a semiconductor layer doped with a first-type dopant, a first region doped with the first-type dopant, a second region doped with the first-type dopant, and a third region doped with a second-type dopant, where the second-type dopant is opposite the first-type dopant. The first, second, and third regions are non-overlapping and are formed in the semiconductor layer. The third region is positioned between the first region and the second region. The apparatus also comprises a plurality of Zener implant regions buried in the semiconductor layer and the third region, where each of the plurality of Zener implant regions is configured to generate a different pinch-off region.
Claims15
An apparatus, comprising:
- a semiconductor layer doped with a first-type dopant;
- a first region doped with the first-type dopant and formed in the semiconductor layer;
- a second region doped with the first-type dopant and formed in the semiconductor layer;
- a third region doped with a second-type dopant and formed in the semiconductor layer, the second-type dopant is opposite the first-type dopant, the first, second, and third regions are non-overlapping, and the third region is positioned between the first region and the second region;
- and
- a plurality of Zener implant regions buried in the semiconductor layer and the third region, each of the plurality of Zener implant regions configured to generate a different pinch-off region.
An apparatus, comprising:
- a semiconductor layer doped with a first-type dopant;
- a first region doped with the first-type dopant and formed at a first position in the semiconductor layer;
- a second region doped with the first-type dopant and formed at a second position in the semiconductor layer;
- and
- multiple, non-overlapping, highly-doped regions buried in the semiconductor layer and in a lightly-doped region,
- wherein the apparatus comprises a buried Zener diode.
Dependencies are inferred from the claim text.