Structure and formation method of semiconductor device with capacitors

A semiconductor device structure, comprising:

• a lower electrode over a semiconductor substrate;
• a first capacitor dielectric layer over the lower electrode;
• an intermediate electrode over the first capacitor dielectric layer;
• a second capacitor dielectric layer over the intermediate electrode, wherein the second capacitor dielectric layer and the first capacitor dielectric layer are made of different materials;
• and
• an upper electrode over the second capacitor dielectric layer, wherein:
• the lower electrode, the first capacitor dielectric layer, and the intermediate electrode together form a first capacitor,
• the intermediate electrode, the second capacitor dielectric layer, and the upper electrode together form a second capacitor,
• the first capacitor has a first linear temperature coefficient and a first quadratic voltage coefficient,
• the second capacitor has a second linear temperature coefficient and a second quadratic voltage coefficient, and
• at least one of a first ratio of the first linear temperature coefficient to the second linear temperature coefficient and a second ratio of the first quadratic voltage coefficient to the second quadratic voltage coefficient is negative.

A method for forming a semiconductor device structure, comprising:

• forming a lower conductive layer over a semiconductor substrate;
• forming a first capacitor dielectric layer over the lower conductive layer;
• forming an intermediate conductive layer over the first capacitor dielectric layer;
• forming a second capacitor dielectric layer over the intermediate conductive layer, wherein the second capacitor dielectric layer and the first capacitor dielectric layer are made of different materials;
• and
• forming an upper conductive layer over the second capacitor dielectric layer, wherein at least one of the lower conductive layer, the intermediate conductive layer, and the upper conductive layer has an average grain size in a range from about 3.5 nm to about 6.5 nm.