Electronic device and method of fabricating the same

An electronic device comprising a semiconductor memory,

• wherein the semiconductor memory comprises:
• first column lines extending in a first direction;
• first sub-column lines extending in the first direction;
• first row lines extending in a second direction intersecting with the first direction;
• first tiles including first memory cells connected between the first column lines and the first row lines;
• first contact plugs disposed between the first tiles that are adjacent to each other in the first direction, the first contact plugs being coupled to the first sub-column lines;
• second contact plugs disposed between the first tiles that are adjacent to each other in the second direction, the second contact plugs being coupled to the first row lines;
• and
• a first connection structure coupled between the first column lines and the sub-column lines at predetermined locations such that, as a length of a current path on a first row line from a selected first memory cell to a corresponding second contact plug increases, a length of a current path from the selected first memory cell to a corresponding first contact plug decreases.