US 2019/0157345 A1 · MRAM, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE INCLUDING THE MRAM

Abstract

A Magnetic Random Access Memory (MRAM), a method of manufacturing the same, and an electronic device including the same are provided. The MRAM includes a substrate, an array of memory cells arranged in rows and columns, bit lines, and word lines. The memory cells each include a vertical switch device and a magnetic tunnel junction on the switch device and electrically connected to a first terminal of the switch device. An active region of the switch device at least partially includes a single-crystalline semiconductor material. Each of the memory cell columns is disposed on a corresponding bit line, and a second terminal of each of the respective switch devices in the memory cell column is electrically connected to the corresponding bit line. Each of the word lines is electrically connected to a control terminal of the respective switch devices of the respective memory cells in a corresponding memory cell row.

Claims34

Dependent claims

A Magnetic Random Access Memory (MRAM), comprising:

a substrate;
an array of memory cells disposed on the substrate, wherein the array of memory cells comprises a plurality of memory cells arranged in rows and columns, each of the memory cells comprises a vertical switch device and a magnetic tunnel junction disposed on the switch device and electrically connected to a first terminal of the switch device, wherein an active region of the switch device at least partially comprises a single-crystalline semiconductor material;
a plurality of bit lines formed on the substrate, wherein each of the memory cell columns is disposed on a corresponding one of the bit lines, and a second terminal of each of the respective switch devices in a respective memory cell column is electrically connected to the corresponding bit line;
and
a plurality of word lines formed on the substrate, wherein each of the word lines is electrically connected to a control terminal of each of the respective switch devices of the respective memory cells in a corresponding one of the memory cell rows.

2 more elements

A method of manufacturing a Magnetic Random Access Memory (MRAM), the method comprising:

providing a stack of a sacrificial layer, a first source/drain layer, a channel layer, and a second source/drain layer on a substrate;
defining a plurality of pillar-shaped active regions arranged in rows and columns in the first source/drain layer, the channel layer, and the second source/drain layer;
removing the sacrificial layer and forming a plurality of bit lines extending below the respective columns of active regions in a space left by the removal of the sacrificial layer;
forming gate stacks around peripheries of the channel layer;
forming a plurality of word lines between the respective rows of active regions, wherein each of the word lines is electrically connected to the gate stacks of the respective memory cells in a corresponding one of the rows;
forming a dielectric layer to cover the stack and the word lines;
and
forming, on the dielectric layer, magnetic tunnel junctions electrically connected to the second source/drain layer in the respective active regions.

5 more elements

Dependencies are inferred from the claim text.

Mram, method of manufacturing the same, and electronic device including the mram

Life of this patent

Mram, method of manufacturing the same, and electronic device including the mram

Life of this patent

Abstract

Claims34