Magnetic random access memory and manufacturing method thereof

A method of manufacturing a semiconductor device including a magnetic random access memory (MRAM) cell, the method comprising:

• forming a first conductive layer over a first interlayer dielectric (ILD) layer;
• forming a stacked layer for a magnetic tunnel junction (MTJ) stack over the first conductive layer;
• forming a second conductive layer over the stacked layer;
• patterning the second conductive layer, the stacked layer and the first conductive layer, thereby forming an MRAM cell structure including a bottom electrode formed by the first conductive layer, the magnetic tunnel junction (MTJ) stack and a top electrode formed by the second conductive layer;
• forming a first insulating cover layer over the MRAM cell structure;
• forming a second insulating cover layer over the first insulating cover layer;
• forming a second ILD layer;
• forming a contact opening in the second ILD layer, thereby exposing the second insulating cover layer;
• removing a part of the second insulating cover layer and a part of the first insulating cover layer, thereby exposing the top electrode;
• and
• forming a third conductive layer in the opening contacting the top electrode.

A method of manufacturing a semiconductor device, the method comprising:

• forming a magnetic random access memory (MRAM) cell structure including a bottom electrode, a magnetic tunnel junction (MTJ) stack and a top electrode;
• forming a first insulating cover layer over the MRAM cell structure;
• forming a second insulating cover layer over the first insulating cover layer;
• forming a dielectric material to fully cover the second insulating cover layer;
• performing a chemical mechanical polishing operation on the dielectric material to expose a part of the second insulting cover layer above the MRAM cell structure and not to expose the first insulating cover layer;
• forming an interlayer dielectric (ILD) layer over the second insulating cover layer and the dielectric material;
• forming a contact opening in the ILD layer, thereby exposing the second insulating cover layer;
• removing a part of the second insulating cover layer and a part of the first insulating cover layer, thereby exposing the top electrode;
• and
• forming a conductive layer in the opening to contact the top electrode.