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US 2019/0157342 A1Published application
Integrated circuit with hall effect and anisotropic magnetoresistive (amr) sensors
AssigneeTexas Instruments Incorporated
InventorsDok Won Lee, William David French, Keith Ryan Green
Life of this patent
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Abstract
Disclosed examples provide wafer-level integration of magnetoresistive sensors and Hall-effect sensors in a single integrated circuit, in which one or more vertical and/or horizontal Hall sensors are formed on or in a substrate along with transistors and other circuitry, and a magnetoresistive sensor circuit is formed in the IC metallization structure.
Claims15
An integrated circuit (IC), comprising:
- a substrate having a top surface,
- a Hall effect sensor circuit formed at least partially on or in the substrate, wherein the Hall effect sensor circuit comprises a Hall sensor for sensing magnetic fields oriented parallel or horizontal to the top surface of the substrate;
- and
- a magnetoresistive sensor circuit formed in a metallization structure located over the substrate,
- the Hall effect sensor and the magnetoresistive sensor circuit being configured to cooperate to detect 360° rotation of the substrate.
2 more elements
An integrated circuit (IC), comprising:
- a substrate having a top surface,
- a Hall effect sensor circuit formed at least partially on or in the substrate, wherein the Hall effect sensor circuit comprises:
- a vertical Hall sensor for sensing magnetic fields oriented parallel to the top surface of the substrate, the vertical Hall sensor including a Hall plate disposed in the substrate;
- and
- a horizontal Hall sensor for sensing magnetic fields oriented perpendicular to the top surface of the substrate, the horizontal Hall sensor including a Hall plate disposed in the substrate;
- a metallization structure disposed over the top surface of the substrate;
- and
- a magnetoresistive sensor circuit formed in the metallization structure for sensing magnetic fields oriented parallel to the top surface of the substrate.
5 more elements
Dependencies are inferred from the claim text.