Method for manufacturing a photosensor comprising a stack of layers placed on top of each other

A method for manufacturing a photodetector able to operate for the photodetection of infrared electromagnetic waves, comprising a stack of thin layers placed on top of one another, the method comprising:

• obtaining a first assembly of stacked layers, forming a detection assembly, comprising a first substrate layer made from a first semiconducting substrate material, a photoabsorbent layer made from an active semiconductor material, a barrier layer made from a semiconductor barrier material and at least one contact layer made from a first semiconductor contact material, and
• a second assembly of stacked layers forming a reading circuit, comprising at least one second substrate layer and a multiplexing layer made from a second semiconductor contact material,
• gluing said first and second assembly of stacked layers between the contact layer of the first assembly and the multiplexing layer of the second assembly,
• etching through said second assembly of a plurality of interconnect vias,
• p or n doping of zones of the contact layer of the first assembly through said interconnect vias.