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US 2019/0157333 A1Published application
Hybrid bonded structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorBo-Tsung TSAI
Life of this patent
Estimating the term…
Abstract
A hybrid bonded structure including a first integrated circuit component and a second integrated circuit component is provided. The first integrated circuit component includes a first dielectric layer, first conductors and isolation structures. The first conductors and the isolation structures are embedded in the first dielectric layer. The isolation structures are electrically insulated from the first conductors and surround the first conductors. The second integrated circuit component includes a second dielectric layer and second conductors. The second conductors are embedded in the second dielectric layer. The first dielectric layer is bonded to the second dielectric layer and the first conductors are bonded to the second conductors.
Claims20
A method of fabricating a hybrid bonded structure, comprising:
- providing a first integrated circuit component comprising a first semiconductor substrate having a plurality of first semiconductor devices therein, a first interconnection structure disposed on the first semiconductor substrate, a first dielectric layer covering the first interconnection structure and at least one first conductor group, the at least one first conductor group comprising a plurality of first conductors electrically connected to one another through the first interconnection structure;
- providing a second integrated circuit component comprising a second semiconductor substrate having a plurality of second semiconductor devices therein, a second interconnection structure disposed on the second semiconductor substrate, a second dielectric layer covering the second interconnection structure and at least one second conductor group, the at least one second conductor group comprising a plurality of second conductors electrically connected to one another through the second interconnection structure;
- and
- performing a hybrid bonding process to bond the first integrated circuit component and the second integrated component such that the first dielectric layer is bonded to the second dielectric layer and the plurality of first conductors are bonded to the plurality of second conductors.
1 more element
A method of fabricating a hybrid bonded structure, comprising:
- providing a first integrated circuit component comprising a first semiconductor substrate, a first interconnection structure, a first dielectric layer and a plurality of first conductor groups, the first semiconductor substrate comprising a plurality of first semiconductor devices therein, the first interconnection structure being disposed on the first substrate and electrically connected to the first semiconductor devices, the first dielectric layer covering the first interconnection structure, the plurality of first conductor groups being embedded in the first dielectric layer and electrically connected to the first semiconductor devices through the first interconnection structure, and at least one first conductor group among the plurality of first conductor groups comprising a plurality of first conductors electrically connected to one another;
- a second integrated circuit component comprising a second semiconductor substrate, a second interconnection structure, a second dielectric layer and a plurality of second conductor groups, the second semiconductor substrate comprising a plurality of second semiconductor devices therein, the second interconnection structure being disposed on the second substrate and electrically connected to the second semiconductor devices, the second dielectric layer covering the second interconnection structure, the plurality of second conductor groups being embedded in the second dielectric layer and electrically connected to the second semiconductor devices through the second interconnection structure, and at least one second conductor group among the plurality of second conductor groups comprising a plurality of second conductors electrically connected to one another,
- performing a hybrid bonding process to bond the first integrated circuit component and the second integrated component such that the first dielectric layer is bonded to the second dielectric layer and the at least one first conductor group is electrically connected to the at least one second conductor group, wherein a shunt path is provided by the at least one first conductor group, the at least one second conductor group, the first interconnection structure and the second interconnection structure.
A hybrid bonded structure, comprising:
- a first integrated circuit chip comprising a first semiconductor substrate having a plurality of first semiconductor devices therein, a first interconnection structure disposed on the first semiconductor substrate, a first dielectric layer covering the first interconnection structure and at least one first conductor group, the at least one first conductor group comprising a plurality of first conductors electrically connected to one another through the first interconnection structure;
- and
- a second integrated circuit chip comprising a second semiconductor substrate having a plurality of second semiconductor devices therein, a second interconnection structure disposed on the second semiconductor substrate, a second dielectric layer covering the second interconnection structure and at least one second conductor group, the at least one second conductor group comprising a plurality of second conductors electrically connected to one another through the second interconnection structure, wherein the first dielectric layer is bonded to the second dielectric layer and the plurality of first conductors are bonded to the plurality of second conductors.
Dependencies are inferred from the claim text.