Imaging element, stacked-type imaging element and solid-state imaging apparatus

An imaging element comprising:

• a photoelectric conversion unit including a stacked structure of a first electrode, an organic photoelectric conversion layer, and a second electrode,
• wherein the organic photoelectric conversion layer includes a mixture of an electron transport material, an organic pigment material, and a hole transport material,
• the electron transport material has higher electron mobility than the organic pigment material,
• the hole transport material has higher hole mobility than the organic pigment material,
• a value EAET of electron affinity of the electron transport material and a value EAAB of electron affinity of the organic pigment material have a relation expressed in Expression (1-1) below,
• a value IPHT of an ionization potential of the hole transport material and a value IPAB of an ionization potential of the organic pigment material have a relation expressed in Expression (1-2) below, and
• the value EAET of electron affinity of the electron transport material and the value INT of the ionization potential of the hole transport material have a relation expressed in Expression (1-3) below:
• EAET≥EAAB (1-1);
• IPAB≥IPHT (1-2);
• and
• IPNT−EAET≥1.0 eV (1-3).