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US 2019/0157328 A1Published application
Image sensor, electronic device and manufacturing method thereof
AssigneeHuaian Imaging Device Manufacturer Corporation
InventorsYosuke KITAMURA, Amane OISHI, Xiaolu HUANG
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Abstract
In one or more exemplary embodiments, an image sensor comprises: a logic region, comprising a plurality of transistors; and a pixel region, comprising a plurality of pixel transistors; wherein a gate dielectric layer of a first pixel transistor in the plurality of pixel transistors is thinner than a gate dielectric layer of a first transistor in the plurality of transistors.
Claims15
An image sensor, comprising:
- a logic region, comprising a plurality of transistors;
- a pixel region, comprising a plurality of pixel transistors;
- wherein a gate dielectric layer of a first pixel transistor in the plurality of pixel transistors is thinner than a gate dielectric layer of a first transistor in the plurality of transistors.
A method of manufacturing an image sensor, comprising:
- providing a substrate comprising a logic region and a pixel region;
- forming a gate dielectric layer at a surface of the substrate, so that a gate dielectric layer in a first pixel transistor region of the pixel region is thinner than a gate dielectric layer in a first transistor region of the logic region.
Dependencies are inferred from the claim text.