Solid-state imaging apparatus
AssigneeCanon Kabushiki Kaisha
InventorsYusuke Onuki, Masahiro Kobayashi, Takafumi Miki
Life of this patent
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Abstract
An inventive solid-state imaging apparatus is provided which can improve the efficiency of the electric carrier transfer from a photoelectric conversion portion to an electric-carrier accumulation portion. The solid-state imaging apparatus includes an active region having the photoelectric conversion portion, the electric-carrier accumulation portion, and a floating diffusion, and an element isolation region having an insulator defining the active region. In planer view, the width of the active region in the electric-carrier accumulation portion under a gate of the first transfer transistor is larger than the width of the active region in the photoelectric conversion portion under the gate of the first transfer transistor.
Claims13
A photoelectric conversion apparatus in which a plurality of pixels are laid out in a matrix form, each of the pixels having an imaging region having a photoelectric conversion portion, a first transfer transistor configured to transfer electric carriers from the photoelectric conversion portion, an electric-carrier accumulation portion to which the electric carriers are transferred from the first transfer transistor, a second transfer transistor configured to transfer electric carriers accumulated in the electric-carrier accumulation portion, and a floating diffusion to which the electric carriers are transferred from the second transfer transistor, the solid-state imaging apparatus comprising:
- an active region having the photoelectric conversion portion, the electric-carrier accumulation portion, and the floating diffusion;
- and
- an element isolation region having an insulator defining the active region;
- wherein, in a predetermined direction in plan view, a width of the active region in the electric-carrier accumulation portion under a gate of the first transfer transistor is larger than a width of the active region in the photoelectric conversion portion under the gate of the first transfer transistor, and
- wherein, in the predetermined direction in plan view, the active region having the photoelectric conversion portion has a width that is larger than the width of the active region in the photoelectric conversion portion under the gate of the first transfer transistor.
A photoelectric conversion apparatus comprising:
- a photoelectric conversion portion having a first semiconductor region of a first conductivity type;
- a first transfer transistor configured to transfer electric carriers from the photoelectric conversion portion;
- an electric-carrier accumulation portion having a second semiconductor region of a first conductivity type, the electric-carrier accumulating portion receiving the electric carriers transferred from the first transfer transistor;
- a second transfer transistor configured to transfer electric carriers accumulated in the electric-carrier accumulation portion;
- a floating diffusion to which the electric carriers are transferred from the second transfer transistor;
- wherein, at a side where the photoelectric conversion portion is provided, the first semiconductor region is placed between third semiconductor regions of a second conductivity type in a cross section in a channel width direction of the first transfer transistor under the gate of the first transfer transistor,
- wherein, at a side where the electric-carrier accumulation portion is provided, the second semiconductor region is placed between third semiconductor regions of the second conductivity type in a cross section in the channel width direction of the first transfer transistor under the gate of the first transfer transistor,
- wherein a width of the second semiconductor region placed between the third semiconductor regions is larger than the width of the first semiconductor region placed between the third semiconductor regions in a cross section in the channel width direction of the first transfer transistor under the gate of the first transfer transistor, and
- wherein, in the channel width direction of the first transfer transistor in plan view, the first semiconductor region having the photoelectric conversion portion has a width that is larger than the width of the first semiconductor region placed between the third semiconductor regions.
Dependencies are inferred from the claim text.