Back to results
US 2019/0157325 A1Published application
Solid-state imaging device, manufacturing method thereof, and electronic apparatus
AssigneeSony Corporation
InventorTakekazu Shinohara
Life of this patent
Estimating the term…
Abstract
A solid-state imaging device having a backside illuminated structure, includes: a pixel region in which pixels each having a photoelectric conversion portion and a plurality of pixel transistors are arranged in a two-dimensional matrix; an element isolation region isolating the pixels which is provided in the pixel region and which includes a semiconductor layer provided in a trench by an epitaxial growth; and a light receiving surface at a rear surface side of a semiconductor substrate which is opposite to a multilayer wiring layer.
Claims21
1-18. (canceled)
A light detecting device, comprising:
- a semiconductor substrate including a first side as a light-receiving side, and a second side opposite to the first side, the semiconductor substrate including:
- a plurality of photoelectric conversion regions in the semiconductor substrate, at least one of the plurality of the photoelectric conversion regions comprising:
- a first photoelectric conversion region,
- a second photoelectric conversion region disposed adjacent to the first photoelectric conversion region, and
- a first element isolation region disposed between the first photoelectric conversion region and the second photoelectric conversion region, the first element isolation region including at least a p-type semiconductor region and a first void region,
- a first insulating film disposed on the first side of the semiconductor substrate;
- a first insulating layer;
- a first light shielding element, wherein at least a portion of the first light shielding element is disposed over the first element isolation region;
- and
- a multilayer wiring layer disposed on the second side of the semiconductor substrate.
7 more elements
An electronic apparatus, comprising:
- an optical system;
- and
- a light detecting device, comprising:
- a semiconductor substrate including a first side as a light-receiving side, and a second side opposite to the first side, the semiconductor substrate including:
- a plurality of photoelectric conversion regions in the semiconductor substrate, at least one of the plurality of the photoelectric conversion regions comprising:
- a first photoelectric conversion region,
- a second photoelectric conversion region disposed adjacent to the first photoelectric conversion region, and
- a first element isolation region disposed between the first photoelectric conversion region and the second photoelectric conversion region, the first element isolation region including a first trench that includes a first void region,
- a first insulating film disposed on the first side of the semiconductor substrate;
- a first insulating layer;
- a first light shielding element, wherein at least a portion of the first light shielding element is disposed over the first element isolation region;
- and
- a multilayer wiring layer disposed on the second side of the semiconductor substrate.
10 more elements
Dependencies are inferred from the claim text.