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US 2019/0157320 A1Published application
High Dielectric Constant Dielectric Layer Forming Method, Image Sensor Device, and Manufacturing Method Thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTsung-Han Tsai, Horng-Huei Tseng, Chun-Hao Chou, Kuo-Cheng Lee, Yung-Lung Hsu, Yun-Wei Cheng
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Abstract
A method for forming a high dielectric constant (high-κ) dielectric layer on a substrate including performing a pre-clean process on a surface of the substrate. A chloride precursor is introduced on the surface. An oxidant is introduced to the surface to form the high-κ dielectric layer on the substrate. A chlorine concentration of the high-κ dielectric layer is lower than about 8 atoms/cm3.
Claims20
A device comprising:
- a substrate having a front surface and a back surface opposite to the front surface, wherein the substrate further has a light sensing region abutting the front surface;
- and
- a high dielectric constant (high-κ) dielectric layer disposed on the back surface of the substrate, wherein a chlorine concentration of the high-κ dielectric layer is less than about 8 atoms/cm3.
A device comprising:
- a substrate having a front surface and a back surface opposite to the front surface;
- a light sensing region within the substrate and adjacent the front surface of the substrate;
- and
- a dielectric layer on the back surface of the substrate, wherein a chlorine concentration of the dielectric layer is less than about 8 atoms/cm3.
1 more element
A device comprising:
- a substrate having a front surface and a back surface opposite to the front surface;
- a light sensing region within the substrate, a surface of the light sensing region being level with the front surface of the substrate;
- an interconnect structure on the front surface of the substrate;
- and
- a dielectric layer on the back surface of the substrate, wherein a chlorine concentration of the dielectric layer is less than about 5 atoms/cm3.
2 more elements
Dependencies are inferred from the claim text.