Semiconductor device and manufacturing method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei YAMAZAKI
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Abstract
An object is to reduce a capacitance value of parasitic capacitance without decreasing driving capability of a transistor in a semiconductor device such as an active matrix display device. Further, another object is to provide a semiconductor device in which the capacitance value of the parasitic capacitance was reduced, at low cost. An insulating layer other than a gate insulating layer is provided between a wiring which is formed of the same material layer as a gate electrode of the transistor and a wiring which is formed of the same material layer as a source electrode or a drain electrode.
Claims3
(canceled)
A semiconductor device comprising a pixel portion, the pixel portion comprising:
- a transistor comprising:
- a first conductive layer;
- a first insulating layer over the first conductive layer;
- an oxide semiconductor layer comprising In, Ga, and Zn over the first insulating layer;
- and
- a second conductive layer and a third conductive layer each electrically connected to the oxide semiconductor layer;
- and
- a pixel electrode electrically connected to the transistor,
- wherein the first conductive layer serves as a gate electrode of the transistor and a gate wiring,
- wherein the second conductive layer serves as one of a source electrode and a drain electrode of the transistor and a source wiring,
- wherein the third conductive layer serves as the other of the source electrode and the drain electrode of the transistor,
- wherein the first conductive layer and the second conductive layer intersect with each other in a cross shape and overlap each other in a first region,
- wherein a first transparent conductive layer comprising In, Zn, and oxygen overlaps the first region, and
- wherein a width of a region of the first conductive layer not overlapping with the first region and not overlapping with the oxide semiconductor layer is different from a width of the first conductive layer in the first region.
A semiconductor device comprising a pixel portion, the pixel portion comprising:
- a transistor comprising:
- a first conductive layer;
- a first insulating layer over the first conductive layer;
- an oxide semiconductor layer comprising In, Ga, and Zn over the first insulating layer;
- and
- a second conductive layer and a third conductive layer each electrically connected to the oxide semiconductor layer;
- a pixel electrode electrically connected to the transistor;
- and
- a liquid crystal layer over the pixel electrode,
- wherein the first conductive layer serves as a gate electrode of the transistor and a gate wiring,
- wherein the second conductive layer serves as one of a source electrode and a drain electrode of the transistor and a source wiring,
- wherein the third conductive layer serves as the other of the source electrode and the drain electrode of the transistor,
- wherein the first conductive layer and the second conductive layer intersect with each other in a cross shape and overlap each other in a first region,
- wherein a first transparent conductive layer comprising In, Zn, and oxygen overlaps the first region, and
- wherein a width of a region of the first conductive layer not overlapping with the first region and not overlapping with the oxide semiconductor layer is different from a width of the first conductive layer in the first region.
Dependencies are inferred from the claim text.